Logic compatible embedded DRAM

Embedded DRAM technologies integrate DRAM memory cells and high-performance logic circuits on the same IC. Conventional DRAM relies on low-leakage, high-voltage transistors, whereas high-performance logic circuits use high-leakage, low-voltage transistors. Traditional embedded DRAM technologies combine both types of circuits on a single IC, resulting in complex manufacturing processes that typically require more than six additional masks compared to standard logic technologies.

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UniRAM’s embedded DRAM technologies take a novel approach. By employing proprietary “small block architectures” that shorten bit lines, UniRAM enables DRAM memory cells to function with high-leakage transistors. This innovation allows embedded DRAM to be manufactured using standard logic technologies with little or no changes in the manufacturing process.

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UniRAM has developed a series of IPs to support logic-compatible embedded DRAM, including:​

• Design architectures that shorten bit lines while minimizing area penalties.

• Memory cells built using logic technologies with minimal or no process changes.

• Circuits designed to improve yield and reliability for logic compatible embedded DRAM. 

• Methods to avoid the effects of gate leakage current in nanometer-scale technologies.